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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3229 DESCRIPTION *With TO-220F package *High voltage: VCEO=300V(min) APPLICATIONS *For color TV chroma output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 100 20 2 150 -55~150 UNIT V V V mA mA W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3229 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=10mA; IB=1m A 1.0 V V(BR)CEO Collector-emitter breakdown voltage IC=100A; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10A; IC=0 7 V hFE-1 DC current gain IC=0.5mA ; VCE=10V 20 hFE-2 DC current gain IC=20mA ; VCE=10V 30 200 ICBO Collector cut-off current VCB=240V; IE=0 1.0 A IEBO Emitter cut-off current VEB=5V; IC=0 1.0 A COB Output capacitance IE=0; VCB=20V;f=1MHz 4.0 pF fT Transition frequency IE=20mA ; VCB=20V 75 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3229 Fig.2 outline dimensions 3 |
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